𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Extension of Thru de-embedding technique for asymmetrical and differential devices

✍ Scribed by Issakov, V.; Wojnowski, M.; Thiede, A.; Maurer, L.

Book ID
114442374
Publisher
The Institution of Engineering and Technology
Year
2009
Tongue
English
Weight
551 KB
Volume
3
Category
Article
ISSN
1751-858X

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A “thru-short” method for noise de-embed
A “thru-short” method for noise de-embedding of MOSFETs
✍ Lan Nan; Yong-Zhong Xiong; Koen Mouthaan; Ammar Issaoun; Jinglin Shi; Ban-Leong 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 253 KB

## Abstract A “thru‐short” noise de‐embedding method for MOSFETs is presented. The capability of the “thru‐short” method has been validated through a comparison of measured and de‐embedded noise parameters using different methods. It is shown that the “thru‐short” method is reliable for on‐wafer de

Analyses and wideband modeling (DC-to-50
Analyses and wideband modeling (DC-to-50 GHz) of dummy open devices on silicon for accurate RF devices and ICS de-embedding applications
✍ Yo-Sheng Lin; Chi-Chen Chen; Hsiao-Bin Liang; Meng-Shiung Huang 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 282 KB

## Abstract In this work, a dummy open device with ground guard‐ring and another dummy open device without ground guard‐ring were measured and modeled from DC‐to‐50 GHz for precise de‐embedding of the parasitic part which surrounds the intrinsic part of the RF devices (i.e. MOSFET, SiGe HBT, etc.)