A “thru-short” method for noise de-embedding of MOSFETs

✍ Scribed by Lan Nan; Yong-Zhong Xiong; Koen Mouthaan; Ammar Issaoun; Jinglin Shi; Ban-Leong Ooi

• Book ID: 102522925
• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 253 KB
• Volume: 51
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.24330

✦ Synopsis

Abstract

A “thru‐short” noise de‐embedding method for MOSFETs is presented. The capability of the “thru‐short” method has been validated through a comparison of measured and de‐embedded noise parameters using different methods. It is shown that the “thru‐short” method is reliable for on‐wafer de‐embedding of both S‐parameters and noise parameters up to 18 GHz. Noise contributions from the parasitics due to the contact pads and interconnections surrounding the MOSFET can be determined and removed accurately. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1379–1382, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24330