In this paper, the problem of the deconvolution of SIMS depth proΓles is addressed. In particular, the hypotheses that are necessary for the deconvolution to be possible (in the actual state of the art) in the case of the SIMS signal are reviewed. Then, the principle of regularization, which is a ma
Experimental shift allowance in the deconvolution of SIMS depth profiles
β Scribed by Yunin, Pavel Andreevich; Drozdov, Yurii Nikolaevich; Drozdov, Mikhail Nikolaevich
- Book ID
- 121191980
- Publisher
- John Wiley and Sons
- Year
- 2013
- Tongue
- English
- Weight
- 193 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0142-2421
- DOI
- 10.1002/sia.5259
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π SIMILAR VOLUMES
In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proΓles of boron-doped layers in silicon. The real SIMS proΓles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq
## Abstract Deltaβdoped structures represent a powerful class of test structures to investigate the experimental and fundamental factors limiting the depth resolution obtainable in SIMS sputter depth profiling. In this work, theoretical studies of the effects on the broadening of an Si delta spike