✦ LIBER ✦

Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS

✍ Scribed by A. Toriumi; M. Yoshimi; M. Iwase; K. Taniguchi; C. Hamaguchi

Book ID: 118361748
Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 245 KB
Volume: 170
Category: Article
ISSN: 0039-6028
DOI: 10.1016/0039-6028(86)90988-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Experimental determination of finite inv

Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS

✍ A. Toriumi; M. Yoshimi; M. Iwase; K. Taniguchi; C. Hamaguchi 📂 Article 📅 1986 🏛 Elsevier Science ⚖ 47 KB

Inversion-layer capacitance and mobility

Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

✍ Mong-Song Liang; Jeong Yeol Choi; Ping-Keung Ko; Chenming Hu 📂 Article 📅 1986 🏛 IEEE 🌐 English ⚖ 539 KB

Influences of buried-oxide interface on

Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs

✍ Koga, J.; Takagi, S.; Toriumi, A. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 249 KB

Quantum C-V modeling in depletion and in

Quantum C-V modeling in depletion and inversion: accurate extraction of electrical thickness of gate oxide in deep submicron MOSFETs

✍ Wuyun Quan; Kim, D.M.; Hi-Deok Lee 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 286 KB

Transmission of electromagnetic radiatio

Transmission of electromagnetic radiation through an electron inversion layer of finite thickness in a metal-oxide-semiconductor (MOS) structure

✍ R.F. O'Connell; G. Wallace 📂 Article 📅 1982 🏛 Elsevier Science ⚖ 326 KB

Determination of the thicknesses of gate

Determination of the thicknesses of gate oxide and active layer in SOI structures from CV measurements

✍ J. Gibki; A. Jakubowski; M. Jurczak 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 164 KB

New fromulae for determination of the thicknesses of gate oxide and active layer in SOl structures are presented. The extraction procedure is based on CV measurements of SOl MOSFETs or gated diodes with the parasitic capacitance of the buried oxide taken into account.