✦ LIBER ✦

Determination of the thicknesses of gate oxide and active layer in SOI structures from CV measurements

✍ Scribed by J. Gibki; A. Jakubowski; M. Jurczak

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 164 KB
Volume: 36
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(97)00082-8

No coin nor oath required. For personal study only.

✦ Synopsis

New fromulae for determination of the thicknesses of gate oxide and active layer in SOl structures are presented. The extraction procedure is based on CV measurements of SOl MOSFETs or gated diodes with the parasitic capacitance of the buried oxide taken into account.

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