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Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS

โœ Scribed by A. Toriumi; M. Yoshimi; M. Iwase; K. Taniguchi; C. Hamaguchi


Book ID
104194588
Publisher
Elsevier Science
Year
1986
Weight
47 KB
Volume
170
Category
Article
ISSN
0167-2584

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Determination of the thicknesses of gate
โœ J. Gibki; A. Jakubowski; M. Jurczak ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 164 KB

New fromulae for determination of the thicknesses of gate oxide and active layer in SOl structures are presented. The extraction procedure is based on CV measurements of SOl MOSFETs or gated diodes with the parasitic capacitance of the buried oxide taken into account.