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Quantum C-V modeling in depletion and inversion: accurate extraction of electrical thickness of gate oxide in deep submicron MOSFETs

✍ Scribed by Wuyun Quan; Kim, D.M.; Hi-Deok Lee


Book ID
114539082
Publisher
IEEE
Year
2002
Tongue
English
Weight
286 KB
Volume
49
Category
Article
ISSN
0018-9383

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