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Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells

✍ Scribed by Arreghini, A.; Driussi, F.; Vianello, E.; Esseni, D.; van Duuren, M.J.; Golubovic, D.S.; Akil, N.; van Schaijk, R.

Book ID: 114619389
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 521 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2008.919713

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