✦ LIBER ✦
Dependence of charge trapping and tunneling on the silicon-nitride (Si[sub 3]N[sub 4]) thickness for tunnel barrier engineered nonvolatile memory applications
✍ Scribed by Jung, Myung-Ho; Kim, Kwan-Su; Park, Goon-Ho; Cho, Won-Ju
- Book ID
- 121823917
- Publisher
- American Institute of Physics
- Year
- 2009
- Tongue
- English
- Weight
- 571 KB
- Volume
- 94
- Category
- Article
- ISSN
- 0003-6951
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