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Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers

✍ Scribed by V. F. Agekyan, L. E. Vorob’ev, G. A. Melentyev, H. Nykänen…

Book ID
120806573
Publisher
SP MAIK Nauka/Interperiodica
Year
2013
Tongue
English
Weight
205 KB
Volume
55
Category
Article
ISSN
1063-7834

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The influence on the excitonic luminescence and reflectance spectra of an electric field applied to a Schottky-barrier GaN structure was investigated in dependence on the uncompensated donor concentration. It was discovered that quenching of the luminescence takes place under a reverse bias, while a