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Cathodoluminescence of undoped and Zn-doped GaN epitaxial layers

✍ Scribed by Marasina, L. A. ;Pikhtin, A. N. ;Pichugin, I. G. ;Solomonov, A. V.

Publisher
John Wiley and Sons
Year
1976
Tongue
English
Weight
470 KB
Volume
38
Category
Article
ISSN
0031-8965

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## Abstract Transparent and conductive ZnO:Ga thin films are prepared by laser molecular‐beam epitaxy. Their electron properties were investigated by the temperature‐dependent Hall‐effect technique. The 300‐K carrier concentration and mobility were about __n~s~__ ∼ 10^16^ cm^–3^ and 440 cm^2^/V s,