Influence of the Electric Field on the Excitonic Spectra of Epitaxial GaN Films

✍ Scribed by M.A. Jacobson; E.V. Kalinina; D.K. Nelson; S.O. Romanovsky; A.V. Sel'kin

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 132 KB
• Volume: 216
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199911)216:1<69::aid-pssb69>3.0.co;2-9

✦ Synopsis

The influence on the excitonic luminescence and reflectance spectra of an electric field applied to a Schottky-barrier GaN structure was investigated in dependence on the uncompensated donor concentration. It was discovered that quenching of the luminescence takes place under a reverse bias, while an increase in the intensity occurs under forward bias. Rotation of the exitonic reflectance spectrum induced by an electric field was observed. These effects were attributed to the variation of the thickness of the exciton-free layer under the influence of the applied voltage. As a result, it was shown that the excitonic luminescence and reflectance spectra are well modulated by the space charge and that the character of the modulation is dependent on the uncompensated donor concentration in the sample.