โ Scribed by A. Miyaji; K. Suzuki; A. Tanimoto
No coin nor oath required. For personal study only.
A brief review of excimer lithography for ULSI is presented with an emphasis on the recent progress made in KrF excimer stepper technology. In particular, the types of projection optics, excimer laser and the related performance of steppers are explained in detail. The resist patterns obtained with a recent excimer stepper are shown. Although there are many problems to be overcome for future lithography, it is anticipated that not only 0.35#m design rules but also 0.20 to 0.25#m design rules will be achieved using excimer lasers.
๐ SIMILAR VOLUMES
According to thc SIA roadmap, semiconductor chip geometries will reach feature sizes of 100 nm in the year 2002. In this process the exposure wavelength for the optical lithography is proposed to be 193 nm and ultimately 157 nm, as emitted by the ArF respectively the F2 excimer laser. During the pas