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Excimer laser annealing of shallow As and B doped layers

✍ Scribed by E.V. Monakhov; B.G. Svensson; M.K. Linnarsson; A. La Magna; V. Privitera; M. Camalleri; G. Fortunato; L. Mariucci

Book ID
103843141
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
167 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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## Abstract The combination of Ge pre‐amorphization implantation, low‐energy boron implantation, and non‐melt laser annealing is a promising method for forming ultrashallow p^+^/n junctions in silicon. In this study, shallow p^+^/n junctions were formed by non‐melt annealing implanted samples using