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Reliability of shallow n+-type layers formed in dual As and B implanted silicon by rapid thermal annealing

✍ Scribed by Katsuhiro Yokota; Kouichi Hosokawa; Kouji Oda; Fumiyoshi Miyashita; Kiyoto Hirai; Hiromichi Takano; Masao Kumagai; Yasuo Ando; Kouji Matsuda

Book ID: 114168500
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 393 KB
Volume: 121
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(96)00594-0

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