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Excimer laser annealing of B and BF2 implanted Si

✍ Scribed by E.V. Monakhov; B.G. Svensson; M.K. Linnarsson; A. La Magna; M. Italia; V. Privitera; G. Fortunato; M. Cuscunà; L. Mariucci


Book ID
103843410
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
207 KB
Volume
124-125
Category
Article
ISSN
0921-5107

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Laser-induced surface roughness and damage formation in ultra-shallow n + -p and p + -n junctions, formed by low energy (5 keV) As + and BF 2 + implantations in Si, respectively, with a dose of 1 × 10 15 cm -2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler