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Annealing of shallow implants in Si by excimer laser irradiation

✍ Scribed by W. Wesch; T. Bachmann; F. Hagemann

Book ID
113281889
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
438 KB
Volume
53
Category
Article
ISSN
0168-583X

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Laser-induced surface roughness and damage formation in ultra-shallow n + -p and p + -n junctions, formed by low energy (5 keV) As + and BF 2 + implantations in Si, respectively, with a dose of 1 Γ— 10 15 cm -2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler