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Evolution of microstructure in polycrystalline silicon thin films upon excimer laser crystallization

✍ Scribed by C. -C. Kuo

Book ID
111468278
Publisher
Springer
Year
2008
Tongue
English
Weight
513 KB
Volume
18
Category
Article
ISSN
1054-660X

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## Abstract The defect properties of laser‐crystallized polycrystalline silicon–germanium (Si–Ge) thin films on glass substrates were investigated with electron spin resonance (ESR) and conductivity measurements. The ESR measurements reveal that laser‐crystallized poly Si~1βˆ’__x__~Ge~__x__~ thin fil