✦ LIBER ✦

Characterization of polycrystalline Ge thin films fabricated by short-pulse XeF excimer laser crystallization

✍ Scribed by Chil-Chyuan Kuo

Publisher: Springer US
Year: 2008
Tongue: English
Weight: 553 KB
Volume: 29
Category: Article
ISSN: 1573-8760
DOI: 10.1007/s10946-008-9008-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Micro-Raman spectroscopy characterizatio

Micro-Raman spectroscopy characterization of polycrystalline silicon films fabricated by excimer laser crystallization

✍ Chil-Chyuan Kuo 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 593 KB

Preparation of Si1−xGex thin crystalline

Preparation of Si1−xGex thin crystalline films by pulsed excimer laser annealing of heavily Ge implanted Si

✍ F. Repplinger; E. Fogarassy; A. Grob; J.J. Grob; D. Muller; B. Prévot; J.P. Stoq 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 374 KB

Morphology of Si1−xGex thin crystalline

Morphology of Si1−xGex thin crystalline films obtained by pulsed-excimer-laser annealing of heavily Ge-implanted Si

✍ E.L. Mathé; A. Naudon; F. Repplinger; E. Fogarassy 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 649 KB

Structural and fluorescence properties o

Structural and fluorescence properties of thin films fabricated by pulsed laser deposition technique from Nd:KGW single crystal

✍ J. Lancok; C. Garapon; V. Vorlíček; M. Jelinek; M. Čerňanský 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 335 KB

Influence of laser energy on the crystal

Influence of laser energy on the crystallization of Ge2Sb2Te5 thin film prepared by pulsed laser deposition

✍ Hu, D. Z. ;Pan, F. M. ;Lu, X. M. ;Zhu, J. S. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 371 KB

## Abstract Four Ge~2~Sb~2~Te~5~ thin films were prepared by pulsed laser deposition (PLD) at 58, 100, 140, and 190 mJ/pulse laser energy, respectively. The influence of laser energy on the crystallization of Ge~2~Sb~2~Te~5~ was investigated. The result shows that laser energy has evident effect on