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Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)

✍ Scribed by Raviswaran, Arvind; Liu, Chuan-Pu; Kim, Jaichan; Cahill, David G.; Gibson, J. Murray


Book ID
121449446
Publisher
The American Physical Society
Year
2001
Tongue
English
Weight
200 KB
Volume
63
Category
Article
ISSN
1098-0121

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The growth and photoluminescence of Ge(Si) self-assembled islands on strained Si 1Γ€x Ge x layers (0 < x < 20%) has been investigated. Both island size and density increase when the Ge content in the predeposited Si 1Γ€x Ge x alloy increases. The increased island density is associated with an enhanced