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Etching characteristics of Bi4−xLaxTi3O12 (BLT) in inductively coupled CF4/Ar plasma

✍ Scribed by Dong-Pyo Kim; Chang-Il Kim

Book ID
108411281
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
215 KB
Volume
66
Category
Article
ISSN
0167-9317

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Etch damage evaluation on (Bi4−xLax)Ti3O
Etch damage evaluation on (Bi4−xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources
✍ Jong-Gyu Kim; Gwan-Ha Kim; Kyoung-Tae Kim; Chang-Il Kim 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 632 KB

The etching mechanism of (Bi 4Àx La x )Ti 3 O 12 (BLT) thin films in Ar/Cl 2 inductively coupled plasma (ICP) and plasmainduced damages at the etched surfaces were investigated as a function of gas-mixing ratios. The maximum etch rate of BLT thin films was 50.8 nm/min of 80% Ar/20% Cl 2 . From vario