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Etch-induced MOS guard-ring-protected schottky-barrier diodes

✍ Scribed by Sreenath, R.N.; Chandra, M. Mohan; Suryan, G.

Book ID
114454105
Publisher
The Institution of Electrical Engineers
Year
1984
Weight
348 KB
Volume
131
Category
Article
ISSN
0143-7100

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## Abstract We investigate the width, spacing, and number dependencies of an Al^+^‐implanted field limiting ring (FLR) and the influence of an Al^+^‐implanted internal ring on the breakdown voltage characteristics of a silicon carbide (SiC) Schottky barrier diode (SBD). SiC‐SBDs having an Al^+^‐imp