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The guard-ring termination for the high-voltage SiC Schottky barrier diodes

✍ Scribed by Ueno, K.; Urushidani, T.; Hashimoto, K.; Seki, Y.

Book ID
120083201
Publisher
IEEE
Year
1995
Tongue
English
Weight
194 KB
Volume
16
Category
Article
ISSN
0741-3106

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πŸ“œ SIMILAR VOLUMES

Improvement in breakdown voltage charact
Improvement in breakdown voltage characteristics of SiC Schottky barrier diode by incorporating a guard ring-assisted field limiting ring and an internal ring
✍ Kim, Seong-Jin ;Kim, Shin ;Yu, Soon-Jae ;Kim, Song-Gang πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 491 KB

## Abstract We investigate the width, spacing, and number dependencies of an Al^+^‐implanted field limiting ring (FLR) and the influence of an Al^+^‐implanted internal ring on the breakdown voltage characteristics of a silicon carbide (SiC) Schottky barrier diode (SBD). SiC‐SBDs having an Al^+^‐imp