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A Schottky-barrier diode with self-aligned floating guard ring

✍ Scribed by Chuang, C.T.; Arienzo, M.; Tang, D.D.-L.; Isaac, R.D.


Book ID
114594887
Publisher
IEEE
Year
1984
Tongue
English
Weight
541 KB
Volume
31
Category
Article
ISSN
0018-9383

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## Abstract We investigate the width, spacing, and number dependencies of an Al^+^‐implanted field limiting ring (FLR) and the influence of an Al^+^‐implanted internal ring on the breakdown voltage characteristics of a silicon carbide (SiC) Schottky barrier diode (SBD). SiC‐SBDs having an Al^+^‐imp