Epitaxial growth of rutile films on Si(100) substrates by thermal oxidation of evaporated titanium films in argon flux
β Scribed by Dai, Z; Naramoto, H; Narumi, K; Yamaoto, S
- Book ID
- 121379500
- Publisher
- Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 114 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0953-8984
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π SIMILAR VOLUMES
Carbon films of few atomic layers in thickness were grown on Si(100) substrates in an ultrahigh vacuum environment by pulsed-laser evaporation of graphite targets. Auger studies of the growth shows it to be layer by layer. It was found that the first two layers deposited, which wet the silicon surfa
MgO thin films have been grown on Si 100 substrates at low temperatures of 500-8508C by metal-organic molecular Ε½ . beam epitaxy MOMBE using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve Ε½ . deposition. The composition of the films was determined by Auger electr