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Epitaxial growth of in situ doped silicon by LPCVD

✍ Scribed by C Domínguez; G Pastor; E Domínguez


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
283 KB
Volume
37
Category
Article
ISSN
0042-207X

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The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ®lms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of re¯ection high-energy ele