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Epitaxial growth of Bi2O2.33 by halide Cvd

✍ Scribed by Dr. Mikael Schuisky; Dr. Anders Hårsta

Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
422 KB
Volume
2
Category
Article
ISSN
0948-1907

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📜 SIMILAR VOLUMES

ChemInform Abstract: Epitaxial Growth of
ChemInform Abstract: Epitaxial Growth of Bi2O2.33 by Halide CVD.
✍ M. SCHUISKY; A. HAARSTA 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 30 KB 👁 1 views

## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable v

Epitaxial Growth of Bi4Ti3O12 on α-Al2O3
Epitaxial Growth of Bi4Ti3O12 on α-Al2O3(012) Substrates by CVD Using Metal Chloride Precursors
✍ M. Schuisky; R. Skoog; A. Hårsta 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 398 KB

gas was ultrahigh purity (UHP) argon. UHP oxygen, saturated with deionized H 2 O, served as the oxidant. The introduction of H 2 O was necessary to avoid the formation of BaF 2 as an impurity phase. Typical processing conditions for this study are summarized in Table . Table 1. Typical processing co