ChemInform Abstract: Epitaxial Growth of Bi2O2.33 by Halide CVD.
β Scribed by M. SCHUISKY; A. HAARSTA
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 30 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0931-7597
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β¦ Synopsis
Abstract
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π SIMILAR VOLUMES
gas was ultrahigh purity (UHP) argon. UHP oxygen, saturated with deionized H 2 O, served as the oxidant. The introduction of H 2 O was necessary to avoid the formation of BaF 2 as an impurity phase. Typical processing conditions for this study are summarized in Table . Table 1. Typical processing co