Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001)

✍ Scribed by M. Falke; B. Gebhardt; G. Beddies; S. Teichert; H.-J. Hinneberg

• Book ID: 104305538
• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 410 KB
• Volume: 55
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(00)00444-5

✦ Synopsis

TEM and RBS studies of the solid phase reaction of Co / Ti-and Co / Hf / Si(001) layer systems are reported. In addition to conventional annealing procedures a special thermal treatment was applied to investigate the intermediate stages of the reaction during heating up. With rising temperature a complex Co-Si-phase sequence was observed which finally results in the growth of epitaxial CoSi . The emerging silicide phases were proved to grow with preferred orientation relations to the 2 substrate. The observed growth behaviour is compared for both the systems and discussed considering aspects of energy minimization and material supply under the conditions of a thin film reaction.