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Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process

✍ Scribed by Lee, Jong Geol; Kim, Hyun Gi; Kim, Sung Soo


Book ID
123558036
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
872 KB
Volume
534
Category
Article
ISSN
0040-6090

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## Abstract Crystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self‐limiting, constant growth rate per cycle temperature window (100–200 °C) was established which is the major characterist