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Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack

✍ Scribed by Mahapatra, R.; Chakraborty, Amit K.; Horsfall, A. B.; Wright, N. G.; Beamson, G.; Coleman, Karl S.


Book ID
118749725
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
727 KB
Volume
92
Category
Article
ISSN
0003-6951

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HfO 2 films were grown by atomic vapour deposition (AVD) on SiO 2 /Si (1 0 0) substrates. The positive shift of the flat band voltage of the HfO 2 based metal-oxide-silicon (MOS) devices indicates the presence of negative fixed charges with a density of 5 Γ‚ 10 12 cm Γ€2 . The interface trap charge de