Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM

✍ Scribed by Blasco, X.; Nafria, M.; Aymerich, X.; Petry, J.; Vandervorst, W.

• Book ID: 114618046
• Publisher: IEEE
• Year: 2005
• Tongue: English
• Weight: 155 KB
• Volume: 52
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2005.859705