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Electronic structure of memory traps in silicon nitride

✍ Scribed by V.A. Gritsenko; S.S. Nekrashevich; V.V. Vasilev; A.V. Shaposhnikov

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 679 KB
Volume: 86
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2009.03.093

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✦ Synopsis

From experiments on photoluminescence in Si 3 N 4 the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si-Si bond is able to capture holes and electrons in Si 3 N 4 .

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