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Trapping Levels in the Silicon—Silicon Nitride System

✍ Scribed by E. J. M. Kendall


Publisher
John Wiley and Sons
Year
1969
Tongue
English
Weight
379 KB
Volume
32
Category
Article
ISSN
0370-1972

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Electronic structure of memory traps in
✍ V.A. Gritsenko; S.S. Nekrashevich; V.V. Vasilev; A.V. Shaposhnikov 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 679 KB

From experiments on photoluminescence in Si 3 N 4 the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si-Si bond is able to capture holes and electrons in Si