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Electronic structure and band gap of (GaP)1(InP)1(111) superlattice

โœ Scribed by Takeshi Kurimoto; Noriaki Hamada; Atsushi Oshiyama


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
236 KB
Volume
5
Category
Article
ISSN
0749-6036

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Effect of strain on the electronic struc
โœ En-Ge Wang ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 358 KB

We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)l/(InP)l (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV. which is smaller by 0.31eV than the average of the gaps of bulk GaP(2.9leV) and InP(1.48eV). We s