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Strain balanced GaP/GaAs/InP/GaAs superlattices: structural and electronic properties

✍ Scribed by A.H. Bensaoula; A. Freundlich

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
340 KB
Volume
164
Category
Article
ISSN
0022-0248

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Using atomic force microscopy (AFM), low-temperature photoluminescence (both CW and timeresolved) as well as Raman spectroscopy, we have performed a comparative investigation of asgrown and a-particle irradiated GaAs doping superlattices. From AFM no evidence of structural damages was found. On the