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Interface geometry of (GaAs)n(InAs)n and (GaP)n(InP)n ultra-thin superlattices

✍ Scribed by S.K. De Figueiredo; A.C. Ferraz

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
238 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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X-Ray Diffraction Analysis of the In/Ga
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✍ Jose Fayos; Mercedes Perez-Mendez πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 225 KB

Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice