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Electronic structure of ultrathin SinGen strained superlattices: The possibility of direct band gaps

✍ Scribed by Sverre Froyen; D.M. Wood; Alex Zunger


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
834 KB
Volume
183
Category
Article
ISSN
0040-6090

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The mechanism of the visible luminescence in Si nanostructures is a matter of great interest. Lockwood et al. presented strong experimental evidence for the light emission due to quantum confinement in amorphous Si/SiO 2 superlattices in which silicon layers form two-dimensional quantum wells . Both