✦ LIBER ✦

The electronic structure of Si/GaP(110) interface and superlattice

✍ Scribed by A. Madhukar; J. Delgado

Publisher: Elsevier Science
Year: 1981
Tongue: English
Weight: 430 KB
Volume: 37
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(81)91013-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electronic structure of Si (111) interfa

Electronic structure of Si (111) interface between diamond and hexagonal phases

✍ Ming-Zhu Huang; W.Y. Ching 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 249 KB

Electronic structure of ultrathin SinGen

Electronic structure of ultrathin SinGen strained superlattices: The possibility of direct band gaps

✍ Sverre Froyen; D.M. Wood; Alex Zunger 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 834 KB

Inverse photoemission and Kelvin probe s

Inverse photoemission and Kelvin probe studies of the Au/GaP(110) interface

✍ B Adamowicz; ML Grilli; M Pedio; C Ottaviani; A Campo; M Capozi; C Quaresima; P 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 417 KB

The Electronic Band Structure of Si/SiO2

The Electronic Band Structure of Si/SiO2 Superlattices: A First-Principles Study

✍ M. P. J. Punkkinen; T. Korhonen; K. Kokko; I. J. Väyrynen 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 122 KB 👁 2 views

The mechanism of the visible luminescence in Si nanostructures is a matter of great interest. Lockwood et al. presented strong experimental evidence for the light emission due to quantum confinement in amorphous Si/SiO 2 superlattices in which silicon layers form two-dimensional quantum wells . Both

The Au/Si(111) interface: Growth mode, e

The Au/Si(111) interface: Growth mode, energetics, structural and electronic properties

✍ G. Le Lay 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 468 KB

Electronic properties and atomic arrange

Electronic properties and atomic arrangement of the Ag/Si(111) interface

✍ K. Oura; T. Taminaga; T. Hanawa 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 334 KB