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Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice: Bulk and surface

โœ Scribed by En-Ge Wang


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
358 KB
Volume
10
Category
Article
ISSN
0749-6036

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โœฆ Synopsis


We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)l/(InP)l (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV. which is smaller by 0.31eV than the average of the gaps of bulk GaP(2.9leV) and InP(1.48eV). We show how the fundamental gap and the electron occupation can be varied by changing the bond strain in,these systems.


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