Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice: Bulk and surface

✍ Scribed by En-Ge Wang

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 358 KB
• Volume: 10
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(91)90304-a

✦ Synopsis

We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)l/(InP)l (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV. which is smaller by 0.31eV than the average of the gaps of bulk GaP(2.9leV) and InP(1.48eV). We show how the fundamental gap and the electron occupation can be varied by changing the bond strain in,these systems.