Electronic properties of BaTiO3/4H-SiC interface

✍ Scribed by M. Sochacki; P. Firek; N. Kwietniewski; J. Szmidt; W. Rzodkiewicz

• Book ID: 104063946
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 156 KB
• Volume: 176
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2010.08.012

✦ Synopsis

The possibility of barium titanate (BaTiO 3 ) application in silicon carbide (SiC) technology has been elaborated in terms of the dielectric film quality and properties of the BaTiO 3 /4H-SiC interface. High resistivity, high-k thin films containing La 2 O 3 admixture were applied as gate insulator of metalinsulator-semiconductor (MIS) structure. The thin films were deposited by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO 3 + La 2 O 3 (2 wt.%) target on 8 • off-axis 4H-SiC (0001) epitaxial layers doped with nitrogen. The results of current-voltage and capacitance-voltage measurements are presented for MIS capacitors.