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Effect of interface states on electron transport in 4H-SiC inversion layers

✍ Scribed by Arnold, E.; Alok, D.

Book ID
114538806
Publisher
IEEE
Year
2001
Tongue
English
Weight
186 KB
Volume
48
Category
Article
ISSN
0018-9383

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πŸ“œ SIMILAR VOLUMES

Inversion layer electron transport in 4H
Inversion layer electron transport in 4H-SiC metal-oxide-semiconductor field-effect transistors
✍ Tilak, Vinayak πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 491 KB

## Abstract Silicon carbide is the only compound semiconductor with silicon dioxide as its native oxide and can form metal–oxide–semiconductor field‐effect transistors. In this article, we review the inversion layer electron transport properties of 4H‐SiC/SiO~2~. The inversion layer electron transp