✦ LIBER ✦

Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures

✍ Scribed by Ishida, Takeshi; Mine, Toshiyuki; Hisamoto, Digh; Shimamoto, Yasuhiro; Yamada, Ren-ichi

Book ID: 124086010
Publisher: IEEE
Year: 2013
Tongue: English
Weight: 632 KB
Volume: 60
Category: Article
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2235145

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electron and hole injection in metal-oxi

Electron and hole injection in metal-oxide-nitride-oxide-silicon structures

✍ K. A. Nasyrov; S. S. Shaĭmeev; V. A. Gritsenko; J. H. Han; C. W. Kim; J. -W. Lee 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 307 KB

Hole and electron current transport in m

Hole and electron current transport in metal-oxide-nitride-oxide-silicon memory structures

✍ Suzuki, E.; Miura, K.; Hayasi, Y.; Tsay, R.-P.; Schroder, D.K. 📂 Article 📅 1989 🏛 IEEE 🌐 English ⚖ 551 KB

Electron and hole trapping in polycrysta

Electron and hole trapping in polycrystalline metal oxide materials

✍ McKenna, K. P.; Shluger, A. L. 📂 Article 📅 2011 🏛 The Royal Society 🌐 English ⚖ 462 KB

Carrier conduction and trapping in metal

Carrier conduction and trapping in metal-nitride-oxide-semiconductor structures

✍ Suzuki, Eiichi 📂 Article 📅 1982 🏛 American Institute of Physics 🌐 English ⚖ 561 KB

On oxide—nitride interface traps by ther

On oxide—nitride interface traps by thermal oxidation of thin nitride in metal-oxide-nitride-oxide-semiconductor memory structures

✍ Suzuki, E.; Hayashi, Y. 📂 Article 📅 1986 🏛 IEEE 🌐 English ⚖ 410 KB

Electronic structure of memory traps in

Electronic structure of memory traps in silicon nitride

✍ V.A. Gritsenko; S.S. Nekrashevich; V.V. Vasilev; A.V. Shaposhnikov 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 679 KB

From experiments on photoluminescence in Si 3 N 4 the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si-Si bond is able to capture holes and electrons in Si