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Hole and electron current transport in metal-oxide-nitride-oxide-silicon memory structures

✍ Scribed by Suzuki, E.; Miura, K.; Hayasi, Y.; Tsay, R.-P.; Schroder, D.K.


Book ID
114535384
Publisher
IEEE
Year
1989
Tongue
English
Weight
551 KB
Volume
36
Category
Article
ISSN
0018-9383

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