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Electron spin resonance analysis of interfacial Si dangling bond defects in stacks of ultrathin SiO2, Al2O3, and ZrO2 layers on (1 0 0)Si

✍ Scribed by A. Stesmans; V.V. Afanas'ev; M. Houssa

No coin nor oath required. For personal study only.

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Electron spin resonance analysis of interfacial Si dangling bond defects in stacks of ultrathin SiO2, Al2O3, and ZrO2 layers on (1&#xa0;0&#xa0;0)Si