The Pr2O3/Si(0 0 1) interface
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Dieter SchmeiΓer
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Article
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2003
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Elsevier Science
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English
β 525 KB
Praseodymium sequioxide (Pr 2 O 3 ) is among the most promising hetero-oxides which are treated as candidates of choice to replace SiO 2 as the gate dielectric material for sub-0.1mm CMOS technology. However, in order to enable the process integration the hetero-oxides require substantial characteri