Electronic defects induced in silicon by
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A. Belkacem; E. AndrΓ©; J.C. Oberlin; C. Pomot; B. Pajot; A. Chantre
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Article
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1989
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Elsevier Science
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English
β 345 KB
Electronic defects induced in p-type silicon by SF~ plasma etching in microwave multipolar plasma reactors have been studied by capacitance ,spectroscopy, spreading resistance and infrared absorption measurements. A passivation of the boron electrical activity observed near 'the etched surface is as