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Anisotropic inductively coupled plasma etching of silicon with pure SF6

✍ Scribed by R.D. Mansano; P. Verdonck; H.S. Maciel; M. Massia

Book ID
114086737
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
314 KB
Volume
343-344
Category
Article
ISSN
0040-6090

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Anisotropic etching of silicon has been studied in SF / O / He plasma using a multivariable experimental design. It has 6 2 been found that the main monitored responses of the etching process such as silicon etch rate, selectivity of silicon over oxide, etch uniformity and etch anisotropy were infl