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Electron focusing effects in the in-plane gated structures

✍ Scribed by Fujio Wakaya; Yukihiko Takagaki; Sadao Takaoka; Kazuo Murase; Yoshihiko Yuba; Kenji Gamo; Susumu Namba

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
281 KB
Volume
11
Category
Article
ISSN
0749-6036

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πŸ“œ SIMILAR VOLUMES

The influence of surface states on in-pl
The influence of surface states on in-plane-gated structures
✍ P. Baumgartner; C. Engel; G. Abstreiter πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 141 KB

A model for in-plane-gated structures is proposed, taking into account surface currents and surface charges. The lateral band structures and barrier heights are calculated selfconsistently for different bias voltages utilizing this new model. Accumulated negative surface charges lead to a strongly i

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✍ D Reuter; C Meier; A Seekamp; A.D Wieck πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 72 KB

In-plane-gate (IPG) transistors have been fabricated using focused ion beam implantation doping of GaAs=In0:1Ga0:9As= Al0:35Ga0:65As heterostructures. At room temperature in the dark, the devices show good transistor characteristics and-in contrast to IPG transistors deΓΏned by insulation writing usi