Fabrication and characterisation of SiGe
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T. KΓΆster; J. Stein; B. Hadam; J. Gondermann; B. Spangenberg; H.G. Roskos; H. Ku
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Article
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1997
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Elsevier Science
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English
β 319 KB
We prescnt an in-situ technology for fabrication of barrier structures in modulation-doped Si/SiGc inplane-gale (IPG) transistors. A special multilavcr-resist system is developed for pattern transfcr by clcclronbeam lithography (EBL) and auisotropic SFe/O\_, dry etching Barriers arc rcalizcd by etch